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Advance Technical Information
HiPerFET TM
Power MOSFETs
IXFX 120N25
IXFK 120N25
V DSS
I D25
R DS(on)
= 250 V
= 120 A
= 22 m ?
Single MOSFET Die
t rr ≤ 250 ns
Symbol
Test Conditions
Maximum Ratings
PLUS 247 TM (IXFX)
V DSS
V DGR
T J = 25 ° C to 150 ° C
T J = 25 ° C to 150 ° C; R GS = 1 M ?
250
250
V
V
V GS
V GSM
Continuous
Transient
± 20
± 30
V
V
G
D
(TAB)
I D25
I D104
I DM
I AR
T C
T C
T C
T C
= 25 ° C (MOSFET chip capability)
= 104 ° C (External lead capability)
= 25 ° C, pulse width limited by T JM
= 25 ° C
120
75
480
90
A
A
A
A
TO-264 AA (IXFK)
E AR
E AS
dv/dt
T C = 25 ° C
T C = 25 ° C
I S ≤ I DM , di/dt ≤ 100 A/ μ s, V DD ≤ V DSS
T J ≤ 150 ° C, R G = 2 ?
64
3
5
mJ
J
V/ns
G = Gate
S = Source
G
D
S
D = Drain
TAB = Drain
(TAB)
P D
T C = 25 ° C
560
W
T J
-55 ... +150
° C
Features
T JM
T stg
T L
1.6 mm (0.063 in.) from case for 10 s
150
-55 ... +150
300
° C
° C
° C
l
l
l
l
International standard packages
Low R DS (on) HDMOS TM process
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
M d
Mounting torque
TO-264
0.7/6 Nm/lb.in.
rated
Weight
PLUS 247
TO-264
6
10
g
g
l
l
Low package inductance
- easy to drive and to protect
Fast intrinsic rectifier
Applications
l
DC-DC converters
Symbol
V DSS
Test Conditions
V GS = 0 V, I D = 1mA
Characteristic Values
(T J = 25 ° C, unless otherwise specified)
min. typ. max.
250 V
l
l
l
l
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
AC motor control
V GS(th)
V DS = V GS , I D = 8mA
2.0
4.0 V
l
Temperature and lighting controls
I GSS
V GS = ± 20 V, V DS = 0
± 200 n A
PLUS 247 TM package for clip or spring
Space savings
I DSS
R DS(on)
V DS = V DSS
V GS = 0 V
V GS = 10 V, I D = 0.5 I D25
Note 1
T J = 25 ° C
T J = 125 ° C
50 μ A
3 mA
22 m ?
Advantages
l
mounting
l
l
High power density
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98912 (2/02)
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